| Post-Annealing Effects on Cu3BiS3 Thin Films Grown by Chemical Bath Deposition Technique | |||||
| 작성자 | 김** | 작성일 | 2019-07-29 | 조회수 | 33 |
|---|---|---|---|---|---|
|
Journal Article published 1 Apr 2018 in Nanoscience and Nanotechnology Letters volume 10 issue 4 on pages 583 to 586
Abstract
Cu3BiS3 thin films were grown by a chemical bath deposition technique for use in inexpensive photovoltaic devices. The post-annealing effects on the morphological, structural, stoichiometric, optical, and electrical properties were investigated by using FE-SEM, XRD, EDS, UV-Vis spectrophotometry, and Hall measurements. The as-grown Cu3BiS3 thin films showed flower-like crystals with a fully covered surface and a high absorption coefficient of ∼105 cm?1 with a 1.42 eV optical bandgap energy. The carrier concentration, resistivity, and mobility were ∼1016 cm?3, 3.38 × 10?1 Ω · cm, and 7.12 × 101 cm2 · V?1s?1, respectively. As the annealing time increased, the flower-like crystals on the surface of the sample became larger, showing the influence of post-annealing on the crystallinity of the Cu3BiS3 thin film. An XRD spectrum of the sample annealed at 300 °C for 30 min showed several reflection peaks around 29°. The absorption coefficient of the post-annealed sample slightly decreased and the bandgap energy increased. The carrier concentration increased, while the resistivity and mobility of the annealed films decreased. Moreover, homogeneity and chemical composition ratios were estimated from the energy dispersive spectrometer data. |
|||||