| Thermally driven homonuclear-stacking phase of MoS2 through desulfurization | |||||
| 작성자 | 김** | 작성일 | 2019-07-29 | 조회수 | 103 |
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Journal Article published 2019 in Nanoscale volume 11 issue 23 on pages 11138 to 11144
Research funded by Ministry of Education (2017R1D1A1B030307402016R1D1A1B039315942016R1A6A3A11934678) | Ministry of Science, ICT and Future Planning (2018R1A4A1020696)
AbstractEngineering phase transitions or finding new polymorphs offers tremendous opportunities for developing functional materials. We reveal that the thermally driven desulfurization of single-crystalline MoS2 samples improves transport properties by reducing the band gap and further induces metallization. Semi-desulfurization, i.e., removal of the topmost S layer, results in the placement of the exposed Mo layers directly on top of the following sub-layers, together with the bottom S layer of the top layer. This homonuclear (AA) stacking derived from the AA′ stacking of the hexagonal (2H) phase is retained even after further desulfurization of the remaining bottom S layer, i.e., full desulfurization of the top layer. Our findings fundamentally explain why the 2H phase of TMDs is characterized by AA′ stacking.  |
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