Thermoelectric figure of merit (ZT) is highly sensitive to the carrier concentration and maximizes within the narrow region of 1019?1020 cm?3. The SnSe2 single crystal is predicted to have a high ZT value with carrier concentration in the range of 1019?1020 cm?3. Here, we grew SnSe2 thin film on Al2O3 substrate by pulsed laser deposition (PLD) with post-annealing at 400 °C in Argon for 60 min. The annealed thin film shows a high thermoelectric power factor up to 8 μW cm?1 K?2 at 220 K with a carrier concentration of 5.2 × 1019 cm?3. A hexagonal crystal structure of the SnSe2 thin film was confirmed by X-ray diffraction and Raman spectra measurements. The thin film showed an n-type semiconductor behavior. Maximum electrical conductivity and Seebeck coefficient were obtained at 220 K with the values of 210 Scm?1 and ?192 μVK?1, respectively.