| Hydrogen interaction with selectively desulfurized MoS2 surface using Ne+ sputtering | |||||
| 작성자 | 김** | 작성일 | 2019-07-29 | 조회수 | 104 |
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Journal Article published 28 Feb 2019 in Journal of Applied Physics volume 125 issue 8 on page 085102
Research funded by National Research Foundation of Korea (2018R1D1A1B070502012018R1A4A10206962017R1D1A1B03030740)
AbstractBy Ne ion sputtering on the single-crystalline MoS2 surface, we demonstrate that the S layers sandwiching Mo in the top layer are sequentially removed by top-down desulfurization, but the intermediate Mo layer is maintained. Selective desulfurization can be used to control the bandgap of MoS2 by switching the polarity from n-type to p-type conductivity and further inducing metallization. Furthermore, the polarity of the MoS2 surface can also be switched by controlling the hydrogen bonding at/around various sulfur vacancy defects. More importantly, we reveal that such desulfurization weakens the hydrogen interaction on the cleaved MoS2 surface by removing the mono-sulfur vacancies (VS). This finding elucidates the important role of the VS defect for high catalytic activity. |
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